| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 851362 | Optik - International Journal for Light and Electron Optics | 2012 | 6 Pages |
Abstract
Light emitting diodes (LEDs) based on GaN/InGaN material suffer from efficiency droop at high current injection levels. We propose multiple quantum well (MQW) GaN/InGaN LEDs by optimizing the barrier thickness and high–low–high indium composition to reduce the efficiency droop. The simulation results reflect a significant improvement in the efficiency droop by using barrier width of 10 nm and high–low–high indium composition in MQW LED.
Related Topics
Physical Sciences and Engineering
Engineering
Engineering (General)
Authors
Sumitra Singh, Navin K. Rohila, Suchandan Pal, C. Dhanavantri,