Simulation investigation on waveguide properties of terahertz wave through subwavelength semiconductor gap

The waveguide propagation properties of terahertz wave through subwavelength semiconductor trench have been simulationally investigated. The effects of gap width, temperature, doping concentration and dielectric filling materials on waveguide property have been given and discussed. The results show that as temperature and doping concentration increases, the skin depth and the propagation constant decreases. In addition, the effective index increases and the propagation length decreases as the dielectric constant of filling materials increases.