| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 852625 | Optik - International Journal for Light and Electron Optics | 2008 | 4 Pages |
Abstract
A non-equiphase Hermite–Gaussian model is proposed to describe the field in the plane parallel to the junction of double-heterostructure (DH) diode laser beams. The analytical expression for the far field of DH diode laser beams is derived and used to compare the calculated intensity profiles with the measured and calculated values given by Nemoto and Zeng et al., showing a further improvement between the calculated and measured profiles by using the non-equiphase Hermite–Gaussian model.
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Authors
Zhiguo Zhao, Kailiang Duan, Baida Lü,