Enhancement of near-field phase-shifting contact lithography by immersion technique

Near-field phase-shifting contact lithography is theoretically modeled incorporating the immersion technique for improvement of photoresist features. The absorption patterns in the photoresist layer, which correspond to the resolution of features after development, are found to be localized in a more compact and uniform fashion with the immersed lithographic system than with the dry system. Therefore, the resolution and profiles of the high-aspect-ratio features can be notably enhanced by immersion lithography.