| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 862115 | Procedia Engineering | 2012 | 6 Pages |
Abstract
BiSb/nano-SiC composites were fabricated by ball milling and spark plasma sintering. The figure of merit (ZT) was calculated with the electrical conductivity, the Seebeck coefficient and the thermal conductivity. The thermal conductivity decreased, the electrical conductivity and the Seebeck coefficient decreased a little by adding nano-SiC into Bi-Sb thermoelectric materials. As a result, the thermoelectric properties increased. The maximum ZT value at room temperature is 0.53, which was increased 13% than that of the Bi-Sb matrix.
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