Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
862120 | Procedia Engineering | 2012 | 5 Pages |
Abstract
A novel ternary Ag-In-Se semiconductor was prepared using spark plasma sintering technique, and its crystal structure and thermoelectric properties were evaluated. XRD analysis and bandgap measurement indicated that this ternary compound crystallizes in a single phase AgIn5Se8 with its bandgap of 1.11 eV, smaller than that of In2Se3, it therefore is of higher electrical conductivity than In2Se3. The highest power factor and thermoelectric figure of merit ZT, thermal conductivity at 863 K are 2.74x10-4 W.K-2.m-1, 0.61 and 0.39 W.K-2.m-1, respectively.
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