Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
862480 | Procedia Engineering | 2012 | 6 Pages |
Abstract
We have measured carrier relaxation times and nonlinear optical properties in three functionalized epitaxial graphene layers grown on SiC wafers by using ultrafast optical pump-probe spectroscopy and open aperture z-scan at 780 nm. The results demonstrate that after different functionalization, the ratios of the slower relaxation in the range of 3.1-4.6 ps (related to carrier-phonon intraband and interband scattering) increase about 2-6 times compared to original graphene. These changes of relaxation obviously improved the nonlinear optical properties, making functionalized epitaxial graphene can be used as a tuneable saturable absorber.
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