Electrical properties and Raman study of In-doped effects in CdTe

Cadmium-telluride (CdTe) first became known as an infrared optical material as one of the hot pressed polycrystalline Kodak materials. It is a very difficult material to grow from a melt because both elements are volatile and it has a high melting point where appreciable vapour pressure can exist for both elements even if stoichiometry is near perfect. It has a congruent melting point of 1097 °C, which means below that temperature both Cd-rich liquids and Te-rich liquids exist in equilibrium with pure CdTe. [1]High resistivity In-doped CdTe is one of the most important materials for the preparation of the room temperature X- ray and gamma ray detectors. It is well known that the resistivity of CdTeIn strongly depends on the In doping concentration and growth and post-annealing conditions [2,3]. In this research work we studied In-doped CdTe after annealing at various temperatures using Raman spectroscopy.[4–6]