| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 864388 | Procedia Engineering | 2011 | 5 Pages |
Abstract
This paper indicated a theoretical model for describing the effects of the interface recombination on the heterojunction solar cell parameters based on single wall carbon nanotube and GaAs as p-n junction. By choosing the zigzag nanotube and GaAs layer, it is shown that by increasing the interface recombination, short circuit current and open circuit voltage decrease. Depletion current, J-V characteristic and ideality factor variation in terms of interface recombination have been calculated.
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