Article ID Journal Published Year Pages File Type
865444 Tsinghua Science & Technology 2010 10 Pages PDF
Abstract
As integrated circuits (IC) technologies advance into very-deep-sub-micron (VDSM), electrostatic discharge (ESD) failure becomes one of the most devastating IC reliability problems and on-chip ESD protection design emerges as a major challenge to radio frequency (RF), analog, and mixed-signal (AMS) IC designs. This paper reviews key design aspects and recent advances in whole-chip ESD protection designs for RF/AMS IC applications in CMOS technologies.
Related Topics
Physical Sciences and Engineering Engineering Engineering (General)
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