| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8918406 | Materials Today Physics | 2017 | 9 Pages |
Abstract
Photograph of a commercial, 2-inch β-Ga2O3/c-sapphire epiwafer from Nanovation; Evidence of p type Ga2O3: Temperature dependence of the Hall hole concentration, ln(p) versus 1000/T plot leading to a carrier activation energy Ea = 0.56 ± 0.05 eV. Valence band photoemission spectra for the reference Si-doped β -Ga2O3/β -Ga2O3 (n-type) and our β - Ga2O3/c-sapphire (p-type).
Keywords
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Physical Sciences and Engineering
Energy
Energy (General)
Authors
Ekaterine Chikoidze, Adel Fellous, Amador Perez-Tomas, Guillaume Sauthier, Tamar Tchelidze, Cuong Ton-That, Tung Thanh Huynh, Matthew Phillips, Stephen Russell, Mike Jennings, Bruno Berini, Francois Jomard, Yves Dumont,