Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8948492 | Ceramics International | 2018 | 5 Pages |
Abstract
The resistance change of an insulator or semiconductor under applied current or voltage is defined as resistive switching effect, which is a significative physical performance in the exploit of new concept nonvolatile resistance random access memory (RRAM). In our work, the g-C3N4 powder was firstly fabricated by calcination method, and continuously a device with Ag/g-C3N4/FTO structure was prepared using drop-coated g-C3N4 powder to form a film onto FTO. It can be observed that the as-prepared cell exhibits an excellent resistive switching memory characteristic (HRS/LRS resistance ratio can be reached to ~â¯52) and good reliability under applied voltage window of 4.0â¯V. Finally, it is believed that the space charge limited conduction is appropriate to understanding such the memory behavior.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xiaojun Wang, Bai Sun, Xiaoxia Li, Bolin Guo, Yushuang Zeng, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Shu Tian, Weiting Luo,