Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8948545 | Journal of the European Ceramic Society | 2018 | 8 Pages |
Abstract
Valence of Cu cations and Cu segregation of CdCu3Ti4O12 ceramics are initially examined by establishing the subsolidus phase diagram of Cd1-xCu3+x+2yTi4-yO12 (â7 ⤠x ⤠0.07, â1.333 ⤠y ⤠2.91) systematically. Different from CaO-CuO-TiO2 system, the co-existence of hexagonal and orthorhombic CdTiO3 phases is observed in the line between CdTiO3 and CuO. Basing on the obtained phase diagram, three typical ceramics with Cu-equal (CdCu3Ti4O12), Cu-rich (Cd0.930Cu3.070Ti4O12), and Cu-poor (Cd1.137Cu2.863Ti4O12), showing high dielectric constant, are chosen as target samples to investigate the role of Cu valence and segregation in dielectric behaviors. Cu3+ ions, rather than Cu+ ones as reported previously, forms in the grain to act as the hopping charge carriers as demonstrated by X-ray photoelectron spectroscopy and High-energy X-ray absorption Near Edge Structure. This work would give a hint in tuning the stoichiometry for achieving more fascinating structures and properties in new ceramic material design.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Longfei Yuan, Wanbiao Hu, Shaofan Fang, Guangshe Li, Xiyang Wang, Xiaofeng Wu, Wei Han, Liping Li,