Effects of deposition angle on synthesis of amorphous carbon nitride thin films prepared by plasma focus device

Amorphous carbon nitride (a-CNx) thin films were deposited on graphite substrate at different angular positions using a low energy (up to 4.9 kJ) Mather-type plasma focus device. The deposition processes were carried out during 20 focus shots at optimum nitrogen gas pressure of 0.4 mbar. The formation of amorphous carbon nitride was confirmed by Raman Spectroscopy, SEM, EDX, FTIR, and XRD analyses. The intensity ratio of D and G peaks (ID/IG) recorded by Raman Spectroscopy showed two distinct trends at various angular positions. The sample deposited at 30° had the highest ID/IG ratio and correspondingly the highest sp3 CHx content in FTIR spectrum. Samples with lower ID/IG ratio appeared with smaller grain size and more smooth surfaces in SEM images. The highest CN intensities in FTIR spectrum belonged to those samples deposited at 30 and 75° angular positions.