Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD

We report the effects of the growth temperature on the structural and electrical properties of the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray Photoelectron Spectroscopy and Atomic Force Microscopy measurements results indicate that the InAlGaN layer properties is strongly dependent on the growth temperature. It is observed that the Gallium incorporation increases with the increase of the growth temperature. Meanwhile, the surface roughness decreases from 0.49 nm to 0.34 nm with the increase of growth temperature. The variation of structural properties, composition and surface morphology influences the transport properties of the InAlGaN/GaN heterostructures. High 2DEG electron density, low sheet resistance and good C-V response with a steep slope for InAlGaN/GaN HEMT were achieved at an optimized growth temperature window between 900 °C and 950 °C.