Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8955814 | Journal of Crystal Growth | 2018 | 5 Pages |
Abstract
Ca3TaAl3Si2O14 (CTAS) single crystal is attracting much attention for high temperature sensor applications due to its high electrical resistivity and excellent piezoelectric properties. However, it is a big challenge to grow high quality CTAS single crystals. In this work, its growth conditions are optimized. Crack- and inclusion-free crystals are grown, achieving even a high quality single crystal with a width over 2â¯in. In addition, the temperature dependence of electro-elastic properties is systematically studied. This crystal presents a high thermal stability of structure and electro-elastic properties. The dielectric loss is less than 3% from room temperature to 650â¯Â°C. Therefore, CTAS single crystal is promising for high temperature sensor applications.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xiuwei Fu, Encarnación G. VÃllora, Yoshitaka Matsushita, Yuuki Kitanaka, Yuji Noguchi, Masaru Miyayama, Kiyoshi Shimamura, Naoki Ohashi,