Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8961462 | Progress in Crystal Growth and Characterization of Materials | 2018 | 12 Pages |
Abstract
Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5â¯Ãâ¯104 cmâ2. Crystals with different types of conductivity, n-type with free electron concentration up to 1019 cmâ3, p-type with free hole concentration of 1016 cmâ3, and semi-insulating with resistivity exceeding 1011 Ω cm, can be obtained. Ammonothermal GaN of various electrical properties is described in terms of point defects present in the material. Potential applications of high-quality GaN substrates are also briefly shown.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
M. Zajac, R. Kucharski, K. Grabianska, A. Gwardys-Bak, A. Puchalski, D. Wasik, E. Litwin-Staszewska, R. Piotrzkowski, J. Z Domagala, M. Bockowski,