Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9566691 | Applied Surface Science | 2005 | 12 Pages |
Abstract
Through the fabrication of bevels with very small slope angles on a shallow boron implanted silicon via a chemical etch, SIMS ion imaging is performed on the exposed surface. Ion image data is then summed, and in conjunction with accurate measurement of the bevel morphology, a shallow boron implant profile produced. The 'bevel-image' profile compares very well with a profile obtained using a 1Â keV oxygen beam. To ensure a good dynamic range on the 'bevel-image' profile it is important to clean the bevel with a HF etch, prior to imaging.
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Authors
S. Fearn, D.S. McPhail,