Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9566788 | Applied Surface Science | 2005 | 5 Pages |
Abstract
N-Al codoped p-type ZnO thin films have been realized by dc reactive magnetron sputtering in N2O ambient. Hall measurement, X-ray photoelectron spectroscopy, X-ray diffraction and optical transmission were carried out to investigate the effect of growth temperature on the properties of codoped films. Results indicated that N-Al codoped p-type ZnO films with good structural, electrical and optical properties can only be obtained at an intermediate temperature region (e.g., 500 °C). The codoped p-type ZnO had the lowest resistivity of 57.3 Ω cm, and a carrier concentration up to 2.52 Ã 1017 cmâ3. In addition, the N-Al codoped p-type ZnO film deposited at 500 °C was of good crystallinity with a (0 0 2) preferential orientation, and high transmittance about 90% in the visible region.
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Chemistry
Physical and Theoretical Chemistry
Authors
J.G. Lu, L.P. Zhu, Z.Z. Ye, F. Zhuge, Y.J. Zeng, B.H. Zhao, D.W. Ma,