Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9566835 | Applied Surface Science | 2005 | 7 Pages |
Abstract
LaAlO3 (LAO) is explored in this work to replace SiO2 as the gate dielectric material in metal-oxide-semiconductor field effect transistor. Amorphous LAO gate dielectric films were deposited on Si (0 0 1) substrates by low pressure metalorganic chemical vapor deposition using La(dpm)3 and Al(acac)3 sources. The effect of processing parameters such as deposition temperature and precursor vapor flux on growth, structure, morphology, and composition of LAO films has been investigated by various analytical methods deeply. The film growth mechanism on Si is reaction limiting instead of mass transport control. The reaction is thermally activated with activation energy of â¼37 kJ/mol. In the initial growth stage, Al element is deficient due to higher nucleation barrier on Si. The LAO films show a smooth surface and good thermal stability and remain amorphous up to a high temperature of 850 °C. The electrical properties of amorphous LAO ultrathin films on Si have also been evaluated, indicating LAO is suitable for high k gate dielectric applications.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Qi-Yue Shao, Ai-Dong Li, Jin-Bo Cheng, Hui-Qin Ling, Di Wu, Zhi-Guo Liu, Yong-Jun Bao, Mu Wang, Nai-Ben Ming, Cathy Wang, Hong-Wei Zhou, Bich-Yen Nguyen,