Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9566865 | Applied Surface Science | 2005 | 5 Pages |
Abstract
Data are presented on the rigorous method of capacitance-voltage (C-V) measurements to the barrier height of Ti/Al p-GaN Schottky junction. For a sample with Hall concentration of 5.5Â ÃÂ 1016/cm3 the upper limit of the modulation frequency leading the full response of the activated carriers is defined as 1.5Â kHz from the capacitance versus modulation frequency (C-f) plot. The activation energy of the Mg acceptors determined from the temperature-dependent C-f plot is 0.12Â eV. The barrier height estimated with this activation energy and the intercept voltage of the 1/C2-V plot drawn with the 1.5Â kHz C-V data is 1.43Â eV at 300Â K and 1.41Â eV at 500Â K. This is the most reliable barrier height ever reported. A reliable room temperature C-V doping profile is demonstrated using the 1.5Â KHz modulation, which is sensitive enough to resolve the presence of a â¼15Â nm thin highly doped (8Â ÃÂ 1018/cm3) layer formed near the surface.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jae Wook Kim, Jhang Woo Lee,