Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9566892 | Applied Surface Science | 2005 | 6 Pages |
Abstract
Induced stress and amorphization of the silicon single crystal were monitored using micro-Raman spectroscopy as a function of the fluence and pulse duration of the incident laser. The onset of average induced stress occurs at lower fluence when machining with the femtosecond pulse laser. Induced stresses were found to maximize at fluence of 44Â JÂ cmâ2 and 8Â JÂ cmâ2 for nanosecond and femtosecond pulsed lasers, respectively. In both laser pulse regimes, a maximum induced stress is observed at which point the induced stress begins to decrease as the fluence is increased. The maximum induced stress was comparable at 2.0Â GPa and 1.5Â GPa for the two lasers. For the nanosecond pulse laser, the induced amorphization reached a plateau of approximately 20% for fluence exceeding 22Â JÂ cmâ2. For the femtosecond pulse laser, however, induced amorphization was approximately 17% independent of the laser fluence within the experimental range. These two values can be considered nominally the same within experimental error. For femtosecond laser machining, some effect of the laser polarization on the amount of induced stress and amorphization was also observed.
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Authors
M.S. Amer, M.A. El-Ashry, L.R. Dosser, K.E. Hix, J.F. Maguire, Bryan Irwin,