| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9566913 | Applied Surface Science | 2005 | 6 Pages |
Abstract
Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jai Singh,