Epitaxial growth of tin oxide films on (0Â 0Â 1) TiO2 substrates by KrF and XeCl excimer laser annealing

Epitaxial SnO2 thin films were prepared by excimer laser annealing of amorphous SnO2 films on a (0 0 1) TiO2 substrate. The amorphous SnO2 film was prepared by a metal organic deposition (MOD) using di-n-butylbis (2,4-pentanedionate) tin at 300 °C. When using a KrF excimer laser with fluence of 50 to 150 mJ/cm2, polycrystalline SnO2 films were formed on (0 0 1) TiO2 substrate at 25 °C. At fluences of 200 and 250 mJ/cm2, (0 0 2) oriented SnO2 films were obtained. When using a XeCl laser with fluences of 150 and 200 mJ/cm2, the (0 0 2) oriented SnO2 films were obtained. Using the XRD φ scanning measurement, it was found that oriented SnO2 films were epitaxially grown on the (0 0 1) TiO2 substrate. The formation of the epitaxial SnO2 on the (0 0 1) TiO2 substrate was found to depend on the pre-irradiated amorphous SnO2 film thickness, laser fluence and laser wavelength.