Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

In this work, the finite elements analysis using ANSYS® (8.0) of the heteroepitaxial SiGe alloy formation induced by excimer lasers is presented. The numerical simulation of the temperature distribution induced by KrF excimer laser (energy densities 0.50 <Φ< 0.55 J/cm2) on thin amorphous Ge films (10 nm thick) deposited on Si〈1 0 0〉 substrates is obtained. An acceptable agreement between the numerical simulations and the experimental results is found. The melting depth is also evaluated and the laser energy density threshold for the partial melting of the Si substrate is estimated. It allows us to determine the optimum conditions to achieve high quality epitaxy. For both the cases, the temperature profile versus time on the top of the Ge film and at the Ge/Si interface are obtained.