Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567029 | Applied Surface Science | 2005 | 6 Pages |
Abstract
Femtosecond pulsed laser ablation (Ï = 120 fs, λ = 800 nm, repetition rate = 1 kHz) of thin diamond-like carbon (DLC) films on silicon was conducted in air using a direct focusing technique for estimating ablation threshold and investigating the influence of ablation parameter on the morphological features of ablated regions. The single-pulse ablation threshold estimated by two different methods were Ïth(1) = 2.43 and 2.51 J/cm2. The morphological changes were evaluated by means of scanning electron microscopy. A comparison with picosecond pulsed laser ablation shows lower threshold and reduced collateral thermal damage.
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Authors
Y. Dong, H. Sakata, P. Molian,