Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567047 | Applied Surface Science | 2005 | 5 Pages |
Abstract
GaN films were grown on sapphire substrates by laser-induced reactive epitaxy. The domains in the films were determined to be the Ga-polarity by the convergent beam electron diffraction (CBED) technique, while the adjacent matrices had the N-polarity. The domain boundaries were characterized as inversion domain boundaries (IDBs). An atomic structure of the IDB is proposed based on high-resolution transmission electron microscopy (HRTEM) investigations. Control of the polarity of GaN/sapphire films was achieved by suppressing the formation of IDBs with an interlayer of AlGaN and a low-temperature GaN buffer layer.
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Authors
H. Zhou, F. Phillipp, H. Schröder, J.M. Bell,