Pulsed laser deposition of thin films of various full Heusler alloys Co2MnX (XÂ =Â Si, Ga, Ge, Sn, SbSn) at moderate temperature

This work presents pulsed laser deposition of cobalt-based Heusler thin films Co2MnX (X = Si, Ga, Ge, Sn, SbSn) on different substrates (Si, GaAs, InAs). The deposition processes developed in vacuum (about 10−5 Pa) to avoid oxidation of the films and targets. The temperature of the substrates during the depositions was kept below 500 K to minimise interface interdiffusion. From X-ray diffraction, we found that the films are crystalline and slightly oriented. The stoichiometric composition of the films was further checked by EDS, while the size and density of droplets were determined by SEM. The magnetic properties of the films are consistent with those of the bulk material used as target.