| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9567254 | Applied Surface Science | 2005 | 8 Pages |
Abstract
After co-evaporation of a Cu(In1âxGax)Se2 film the chemical and electrical properties of the Cu(In1âxGax)Se2/Mo interface have been studied. It is shown, by XPS depth profile, that MoSe2 is present at the interface. The contact resistivity Ïc has been measured. Resistivities Ïc < 0.08 Ω cm2 were found. From these XPS and electrical measurements it appears that the MoSe2 interfacial layer mediates low resistivity Mo/CIGS contact.
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Authors
L. Assmann, J.C. Bernède, A. Drici, C. Amory, E. Halgand, M. Morsli,