Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567277 | Applied Surface Science | 2005 | 5 Pages |
Abstract
The influence of thickness of Hf-metal buffer layer on the interfacial diffusion and reaction was investigated using in situ X-ray photoelectron spectroscopy, scanning Auger microscope and grazing incident X-ray reflectivity. Hf-metal firstly reacted with native Si oxide forming Hf silicates, and all Si-O was further reduced to be Si0 after 1Â nm Hf-metal deposition. The Hf-metal and Hf-suboxide in Hf(1Â nm)/SiO2/Si structure were further oxidized to be Hf4+ during HfO2 sputtering deposition and post-deposition annealing. Si diffused out and reacted with HfO2 during annealing. The Hf(1Â nm) buffer layer exhibited a better performance than the Hf(0.3Â nm) buffer layer in suppressing the diffusion of Si and the reaction between diffused Si and HfO2.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Ruiqin Tan, Yasushi Azuma, Isao Kojima,