Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567285 | Applied Surface Science | 2005 | 6 Pages |
Abstract
Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3Â g/cm3 grows at the interface between the HfO2 layer and the substrate during post-deposition annealing. The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO2 layer.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
T. Emoto, K. Akimoto, Y. Yoshida, A. Ichimiya, T. Nabatame, A. Toriumi,