Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567287 | Applied Surface Science | 2005 | 6 Pages |
Abstract
It is shown that a new segregation-based mechanism underpins the Stranski-Krastanow (S-K) epitaxial islanding transition in both the InxGa1âxAs/GaAs and Si1âxGex/Si systems over wide ranges of growth conditions. Quantitative segregation calculations allow critical 'wetting' layer thicknesses to be derived and, for the InxGa1âxAs/GaAs system (x = 0.25-1), such calculations show good agreement with experimental measurements. The segregation-mediated driving force is considered to be important, also, for all other epitaxial systems which comprise chemically similar but substantially misfitting materials and which exhibit the S-K transition.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A.G. Cullis, D.J. Norris, M.A. Migliorato, M. Hopkinson,