Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567291 | Applied Surface Science | 2005 | 4 Pages |
Abstract
This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0 0 0 1) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along ã112¯0ã- and ã11¯00ã-directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the ã112¯0ã-direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the ã112¯0ã-direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified.
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Authors
Takeshi Oikawa, Fumitaro Ishikawa, Taketomo Sato, Tamotsu Hashizume, Hideki Hasegawa,