| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9567292 | Applied Surface Science | 2005 | 4 Pages |
Abstract
Post-growth annealing of uniform InAs quantum dots (QDs) grown on GaAs(0 0 1) substrates was investigated, and obtained results gave some useful information about control of QD energy level and an intermixing effect between In and Ga atoms. In particular, a wide control of photoluminescence (PL) peak energy (312 meV) and an extremely narrow PL linewidth (13 meV) were obtained from uniform QDs annealed at 700 °C. Photoluminescence properties of annealed QDs depending on anneal conditions were explained by modification of the QD structure and, an interdiffussion effect was discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yoshiyuki Kobayashi, Koichi Yamaguchi,