Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567306 | Applied Surface Science | 2005 | 4 Pages |
Abstract
The structure and electronic states of an (NH4)2Sx-treated InP(1 1 1)A surface has been studied by using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunneling microscopy (STM), and inverse photoemission spectroscopy (IPES). The sample annealed in ultra-high vacuum (UHV) condition at â¼300-400 °C showed a 2 Ã 2-LEED pattern. Oval-shaped protrusions are observed in filled-state STM images. IPES intensity of the (2 Ã 2)-S surface at EF +1-3 eV and +4-6 eV is decreased by the (NH4)2Sx treatment. Based on these results, a plausible structural model is discussed.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M. Shimomura, Y. Sano, N. Sanada, L.L. Cao, Y. Fukuda,