| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9567318 | Applied Surface Science | 2005 | 6 Pages |
Abstract
Formation of a porous structure on the surface of Ge single crystals by pulsed YAG:Nd laser irradiation at the intensity of â¼25Â MW/cm2 is reported. An increase of surface recombination velocity on the irradiated surface by a factor of 100 is observed and explained by increase of the geometric area of the surface due to formation of pores. The latter is attributed to inhomogeneous pressure of a pulsed laser beam on the melting irradiated surface of the crystal.
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Authors
A. Medvid', A. Mychko, A. Krivich, P. Onufrijevs,