Article ID Journal Published Year Pages File Type
9567338 Applied Surface Science 2005 4 Pages PDF
Abstract
Band alignment of Gd2O3 gate oxide films on n-GaAs(0 0 1) was controlled by the incorporation of SiO2. The photoelectron binding energy shifts in Gd2SiO5 film could be interpreted with relative electronegativity of second nearest neighbor element. The surface and interface morphology of Gd2SiO5/n-GaAs structure was smooth due to the absence of crystalline phase. Energy band gaps were estimated as ∼5.8 and 6.6 eV for Gd2O3 and Gd2SiO5, respectively, by combining photoemission with absorption spectra. A decrease of leakage current density and a saturated accumulation capacitance indicate an enhanced band offset and small roughness in Gd2SiO5/n-GaAs system.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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