| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9567339 | Applied Surface Science | 2005 | 4 Pages |
Abstract
The transmittance of InAsSb/InAsPSb heterostructures is remarkably improved by depositing a Si3N4 top layer. This demonstrates its good anti-reflective property. A study of the influence of various factors on the transmittance of the heterostructures is performed. A comparison was made between the transmittances of the heterostructures under different conditions. The different effects of Si3N4 and ZnS top layers on the transmittance of the InAsSb/InAsPSb heterostructures are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y.Z. Gao, X.Y. Gong, W.Z. Fang, H.Y. Deng, G.J. Hu, M. Aoyama, T. Yamaguchi, N. Dai,