Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567350 | Applied Surface Science | 2005 | 4 Pages |
Abstract
Nitrogen-doped (N-doped) p-type ZnTe films and ZnTe-ZnSe superlattices (SLs) were prepared on GaAs (1Â 0Â 0) substrates by hot wall epitaxy (HWE) using NH3 gas and Zn3N2 as a codoping source. We have investigated the compensation effect of Zn3N2 and optimized the growth conditions. Then the nitrogen-doped ZnTe films and ZnTe-ZnSe superlattices of high crystal quality with a high hole concentration were obtained.
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Authors
S. Sakakibara, Y. Inoue, H. Mimura, K. Ishino, A. Ishida, H. Fujiyasu,