Transport and magnetic properties of Ce-doped LaMnO3 thin films

Ce-doped LaMnO3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature Tc was found to be significantly influenced by the post-annealing conditions at the Tc ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO3 films were identified to be holes from Hall effect measurements.