| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9567356 | Applied Surface Science | 2005 | 4 Pages |
Abstract
ZnO thin films were formed by oxidation of ZnS films on Si substrates. Sb doping of ZnO films was tried by laser irradiation of ZnO deposited with Sb. Although p-type ZnO:Sb film was not obtained, it was observed that the laser irradiation increased the near-ultraviolet (NUV) emission intensity, whereas the visible emission of oxygen vacancies decreased. Moreover, the resistance of the laser-irradiated ZnO:Sb films was higher than that of films without irradiation. These results show that Sb compensates the oxygen vacancy; as a result, the electrons are neutralized by holes generated by the dopant (Sb).
Related Topics
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Authors
K. Ohara, T. Seino, A. Nakamura, T. Aoki, H. Kominami, Y. Nakanishi, Y. Hatanaka,