Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567360 | Applied Surface Science | 2005 | 4 Pages |
Abstract
MgxZn1 â xO films were successfully grown on a-plane sapphire (112¯0) substrates by remote plasma enhanced metalorganic chemical vapor deposition (RPE-MOCVD). Diethyl zinc (DEZn), bis-ethylcyclopentadienyl magnesium (EtCp2Mg) and oxygen plasma were used as source materials. By increasing Mg content in the films, the crystal structure was shifted through a mixed state from wurtzite to rock-salt with no significant segregation. Both optical absorption edges and emission peaks of MgxZn1 â xO films shifted to the higher energy by increasing the Mg content at room temperature, showing an alloy broadening. The Stokes' shift of wurtzite MgxZn1 â xO alloy films was quantitatively evaluated, resulting in a linear dependence on the absorption edge energy.
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Physical and Theoretical Chemistry
Authors
Atsushi Nakamura, Junji Ishihara, Satoshi Shigemori, Toru Aoki, Jiro Temmyo,