Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567475 | Applied Surface Science | 2005 | 8 Pages |
Abstract
Nitrogen doped diamond-like carbon films were deposited on Si (1Â 0Â 0) substrates by arc ion plating (AIP) technique under different N2 volume percentage in the gas mixture of Ar and N2. The deposited films were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Raman spectra indicate that the ID/IG ratio increases with increasing the N2 volume percentage. XPS analysis shows a strong influence of the N2 volume percentage on the N atom concentration and the chemical bonding states in the deposited films. Nitrogen content of the deposited films increased with the increasing of N2 volume percentage. The maximum N concentration and N/C atomic ratio are up to 12.7Â at.% and 0.162 at the 90Â vol.% N2, respectively. From decomposition of XPS C 1s peaks, it shows that the nitrogen doped diamond-like carbon films consist of amorphous carbon-carbon bonding (sp2CC and sp3CC), N atoms bonded to sp3-hybridized C atoms (sp3CN) and N atoms bonded to sp2-hybridized C atoms (sp2CN). The total content of sp3 bonding decreases with increasing N2 volume percentage. XPS N 1s spectra show that there exist the Nsp2C and Nsp3C bonding in the deposited nitrogen doped diamond-like carbon films. As the N2 volume percentage increases, the Nsp3C bonding content increases, but the Nsp2C bonding content decreases.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Y.S. Zou, Q.M. Wang, H. Du, G.H. Song, J.Q. Xiao, J. Gong, C. Sun, L.S. Wen,