Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567628 | Applied Surface Science | 2005 | 11 Pages |
Abstract
Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N2 gas was used as both nitrogen source and carrier gas. The sp3-bonded Cî¸N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline α- and β-C3N4 as well as graphitic-C3N4 and β-Si3N4 which were not easily distinguished. Raman spectroscopy also suggested the existence of α- and β-C3N4 in the films. X-ray photoelectron spectroscopy study indicated the presence of sp2- and sp3-bonded Cî¸N structures in the films while sp3Cî¸N bonding structure predominated to the sp2 Cî¸N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CNx:Si, where x depends on the film depth, with some evidences of crystalline C3N4 formation.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Md.Nizam Uddin, Osama A. Fouad, Masaaki Yamazato, Masamitsu Nagano,