Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567650 | Applied Surface Science | 2005 | 7 Pages |
Abstract
Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(0 0 1) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(0 0 1)-(2Ã1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(0 0 1)-(2Ã1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(0 0 1) surface. It is also found that Cs atoms adsorbed on Si(0 0 1) surface with a height of 2.83±0.05 Ã
from the second layer of Si(0 0 1) surface.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.Y. Park, J.H. Seo, J.Y. Kim, C.N. Whang, S.S. Kim, D.S. Choi, K.H. Chae,