Article ID Journal Published Year Pages File Type
9567667 Applied Surface Science 2005 4 Pages PDF
Abstract
The effects of an electric field on the interband transitions in InxGa1−xAs/InyAl1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A InxGa1−xAs/InyAl1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In0.53Ga0.47As shallow quantum well and a 50 Å In0.65Ga0.35As deep step quantum well bounded by two thick In0.52Al0.48As barriers separated by a 30 Å In0.52Al0.48As embedded potential barrier. The Stark shift of the interband transition energy in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the InxGa1−xAs/InyAl1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that InxGa1−xAs/InyAl1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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