Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567667 | Applied Surface Science | 2005 | 4 Pages |
Abstract
The effects of an electric field on the interband transitions in InxGa1âxAs/InyAl1âyAs coupled step quantum wells have been investigated both experimentally and theoretically. A InxGa1âxAs/InyAl1âyAs coupled step quantum well sample consisted of the two sets of a 50Â Ã
In0.53Ga0.47As shallow quantum well and a 50Â Ã
In0.65Ga0.35As deep step quantum well bounded by two thick In0.52Al0.48As barriers separated by a 30Â Ã
In0.52Al0.48As embedded potential barrier. The Stark shift of the interband transition energy in the InxGa1âxAs/InyAl1âyAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the InxGa1âxAs/InyAl1âyAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that InxGa1âxAs/InyAl1âyAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.H. Kim, T.W. Kim, K.H. Yoo,