Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9567716 | Applied Surface Science | 2005 | 5 Pages |
Abstract
A wirelike shape of Hf silicides, which is not observed in silicides directly grown on Si (0 0 1), has been obtained by oxide mediated epitaxy (OME). Hafnium deposition (â¼0.4 and â¼0.2 ML) onto ultrathin (â¼1 nm) SiO2 and annealing at 900°C resulted in the formation of self-assembled wirelike silicides via a silicate phase (Hf-O-Si bonding units) in the 600-800°C temperature range. Silicide nanowires were found to be encapsulated in the bundle aggregates. The number density of OME-grown silicides apparently decreased as a form of nanowire bundles along with an increasing aspect ratio compared with the directly grown disilicides on Si (0 0 1). This finding has an implication for the use of an ultrathin SiO2 layer in controlling the tradeoff between the number density and the aspect ratio of self-assembled silicides.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jung-Ho Lee,