Article ID Journal Published Year Pages File Type
9567732 Applied Surface Science 2005 8 Pages PDF
Abstract
The application of silicon-on-insulator (SOI) substrates to high-power integrated circuits is hampered by the self-heating effect due to the poor thermal conductivity of the buried SiO2 layer. We introduce aluminum nitride (AlN) thin films formed by ultra-high vacuum electron-beam evaporation with ammonia as an alternative. The chemical composition, surface morphology, and electrical properties of these films were investigated. The film synthesized at 800 °C shows a high AlN content, low surface roughness with a root-mean-square value of 0.46 nm, and high electrical resistivity. Based on thermodynamic analysis and our experimental results, the mechanism of AlN formation is proposed.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
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