| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9568597 | Applied Surface Science | 2005 | 5 Pages |
Abstract
The novel method of the semiconductor nanostructuring (TINE&MEMO) has been developed on the base of the simultaneous AFM-tip induced local anodic oxidation and mechanical modification of the surface under the applying of advanced electric potentials. The TINE&MEMO-based technology allows obtaining the principle new scale of the depth up to 100ânm for the nanostructure fabrication with a low aspect relation between the width and deepness. The developed nanoscale AFM-lithography has been clearly demonstrated on titanium, gallium arsenide and silicon substrates for creation of electronic nanodevices.
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Authors
D.V. Sheglov, A.V. Latyshev, A.L. Aseev,