Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9572118 | Applied Surface Science | 2005 | 7 Pages |
Abstract
The resistance behavior of TaN/Ta diffusion barrier bilayers has been investigated. The dependence of the Ta-phase on the TaN layer thickness was examined by means of X-ray micro-diffraction and resistivity measurements. Furthermore, the influence of the geometry of a damascene trench structure on the Ta-phase of the deposited TaN/Ta barrier bilayers has been studied and compared to the results obtained with blanket wafers. The influence of the Ta-phase on the via resistance of Cu interconnects is discussed.
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Authors
M. Traving, I. Zienert, E. Zschech, G. Schindler, W. Steinhögl, M. Engelhardt,